STP55NE06FP Fast Delivery |IC PHOENIX CO.,LIMITED

STP55NE06FP ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NE06 STP55NE06FPV Drain-source Voltage (V = ..
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STP55NF06FP ,N-CHANNEL 60V 0.017 OHM 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET
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STP55NE06FP
N
STP55NE06
STP55NE06FP- CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPICAL RDS(on)= 0.019Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfetis the latest developmentof
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing densityfor low on-
resistance, rugged avalance characteristics and
less critical alignment steps thereforea remark-
able manufacturingreproducibility.
APPLICATIONS DC MOTOR CONTROL DC-DC& DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP55NE06 STP55NE06FP
VDS Drain-source Voltage (VGS =0) 60 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 60 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C55 30 A Drain Current (continuous)atTc =100o C39 21 A
IDM(•) Drain Current (pulsed) 220 220 A
Ptot Total DissipationatTc =25o C130 35 W
Derating Factor 0.96 0.27 W/oC
VISO Insulation Withstand Voltage (DC)  2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65to 175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse width limitedby safe operatingarea (1)ISD≤55 A,di/dt≤ 300 A/μs,VDD≤ V(BR)DSS,Tj≤ TJMAX
TYPE VDSS RDS(on) ID
STP55NE06
STP55NE06FPVV
<0.022Ω
<0.022ΩAA
January 1998
TO-220 TO-220FP232
1/9
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.15 4.28 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =25V)
200 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc =125C
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage
VDS =VGS ID =250 μA 2 34V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID= 27.5A 0.019 0.022 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =27.5A 25 35 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS=0 3050
STP55NE06/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =30V ID= 27.5A =4.7W VGS =10V
(see test circuit, figure3)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48V ID =55A VGS =10V 80
105 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =48V ID =55A =4.7 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =60A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=55A di/dt= 100 A/μs
VDD =30V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration=300μs, duty cycle1.5%
(•) Pulse widthlimitedby safeoperating area
Safe Operating Areafor TO-220 Safe OperatingAreafor TO-220FP
STP55NE06/FP
3/9
Thermal Impedancefor TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP55NE06/FP
4/9
Gate Chargevs Gate-sourceVoltage
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistancevs Temperature
STP55NE06/FP
5/9
Fig.1: Unclamped Inductive Load Test Circuit
Fig.3: Switching Times Test Circuits For
Resistive Load
Fig.2: Unclamped Inductive Waveform
Fig.4: Gate Charge test Circuit
Fig.5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP55NE06/FP
6/9

Partno	Mfg	Dc	Qty	Available	Descript
STP55NE06FP		N/a	70	avai	N