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Partno	Mfg	Dc	Qty	Available	Descript
STP4NA60FI	ST	N/a	50	avai	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

STP4NA60FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP4NA ..
STP4NA90 ,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified) OFF ———-mmm V(BR)DSS ..
STP4NB50 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP4NB50STP4NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(o ..
STP4NB50FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP4NB50STP4NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(o ..
STP4NB80 ,NSTP4NB80STP4NB80FP®N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS(o ..
STP4NB80FP ,N-CHANNEL 800VSTP4NB80STP4NB80FP®N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS(o ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..

STP4NA60FI
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP4NA60
STP4NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
November 1996
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP4NA60/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220
STP4NA60/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP4NA60/FI
4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP4NA60/FI
5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STP4NA60/FI
6/10

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