STP4NA100 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP4NA100N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on ..
STP4NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP4NA40STP4NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP4NA ..
STP4NA60FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP4NA ..
STP4NA90 ,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)
OFF
———-mmm
V(BR)DSS ..
STP4NB50 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP4NB50STP4NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(o ..
STP4NB50FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP4NB50STP4NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(o ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP4NA100
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP4NA100N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and gate charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
October 1997
1/5
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP4NA1002/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP4NA1003/5
STP4NA1004/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STP4NA1005/5
:
www.ic-phoenix.com
.
