STW42N65M5 ,N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-247Absolute maximum ratingsValueSymbol Parameter UnitTO-220, TO-247TO-220FPD²PAK, I²PAKV Gate- source ..
STW43NM50N , N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247
STW43NM60N ,N-channel 600VElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
STW43NM60ND ,N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) Power MOSFET (with fast diode) in a TO-247 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STW45NM50 ,N-CHANNEL 500VSTW45NM50N-CHANNEL 500V - 0.08Ω - 45A TO-247MDmesh™Power MOSFETTYPE V R IDSS DS(on) DSTW45NM50 500V ..
STW45NM50FD ,N-CHANNEL 500V 0.09 OHM 45A TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T810-600B ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
STP42N65M5-STW42N65M5
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in D2PAK
June 2009 Doc ID 15317 Rev 3 1/18
STx42N65M5N-channel 650 V , 0.070 Ω, 33 A MDmesh™ V Power MOSFET
in I2 PAK, TO-220, TO-220FP , D2P AK and TO-247
Features TO-220 worldwide best R DS(on) Higher V DSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Application Switching applications
DescriptionMDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.
Figure 1. Internal schematic diagram Limited only by maximum temperature allowed
Table 1. Device summary
Contents STx42N65M52/18 Doc ID 15317 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STx42N65M5 Electrical ratings
Doc ID 15317 Rev 3 3/18
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 33 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3. Thermal data
Electrical characteristics STx42N65M5
4/18 Doc ID 15317 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
STx42N65M5 Electrical characteristics
Doc ID 15317 Rev 3 5/18
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
