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STP40NE03L-20 from ST,ST Microelectronics

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STP40NE03L-20

Manufacturer: ST

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

Partnumber Manufacturer Quantity Availability
STP40NE03L-20,STP40NE03L20 ST 90 In Stock

Description and Introduction

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN The **STP40NE03L-20** is a power MOSFET manufactured by **STMicroelectronics**. Below are its key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 40A  
- **Pulsed Drain Current (IDM):** 160A  
- **Power Dissipation (PD):** 80W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.020Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  

### **Package:**
- **TO-220** (Through-hole package)  

### **Features:**
- **Low On-Resistance:** Ensures minimal power loss and high efficiency.  
- **High Current Capability:** Supports up to 40A continuous drain current.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Provides ruggedness in harsh conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control circuits (VGS = 10V).  

### **Applications:**
- **Power Supplies**  
- **Motor Control**  
- **DC-DC Converters**  
- **Automotive Systems**  
- **Battery Management**  

This MOSFET is designed for high-performance power switching applications with low conduction losses.

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