STP36NF06FP ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP36NF06 STP36NF06FPV Drain-source Voltage (V = ..
STP36NF06L ,N-CHANNEL 60V
STP3N100 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP3N100 10 ..
STP3NA100FP ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP3NA100STP3NA100FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP ..
STP3NA50FI ,NSTP3NA50STP3NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP3NA ..
STP3NA60FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP3NA60STP3NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP3NA ..
SZF2002HL ,Low voltage 8-bit microcontroller with 6-kbyte embedded RAM
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
STP36NF06-STP36NF06FP
N-CHANNEL 60V
STP36NF06
STP36NF06FPN-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(1) ISD ≤36A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STP36NF06 STP36NF06FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
STP36NF06 STP36NF06FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)Safe Operating Area for TO-220
STP36NF06 STP36NF06FPTransconductance Static Drain-source On Resistance
STP36NF06 STP36NF06FPSource-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
