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STP34NM60N
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in D2PAK
July 2013 DocID17740 Rev 8 1/20
STB34NM60N, STP34NM60N,
STW34NM60NN-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs
in D²PAK, TO-247 and TO-220 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STB34NM60N, STP34NM60N, STW34NM60N2/20 DocID17740 Rev 8
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID17740 Rev 8 3/20
STB34NM60N, STP34NM60N, STW34NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 31.5 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS VDS ≤ 480 V
Table 3. Thermal data
Electrical characteristics STB34NM60N, STP34NM60N, STW34NM60N
4/20 DocID17740 Rev 8
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID17740 Rev 8 5/20
STB34NM60N, STP34NM60N, STW34NM60N Electrical characteristics
Table 6. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
