STP30N65M5 ,N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STP30NE03L , N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
STP30NE03LFP , N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06 , N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06. , N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06L , N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
SZF2002HL ,Low voltage 8-bit microcontroller with 6-kbyte embedded RAM
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
STP30N65M5-STW30N65M5
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET D2PAK
September 2011 Doc ID 15331 Rev 3 1/22
STB30N65M5, STF30N65M5, STI30N65M5
STP30N65M5, STW30N65M5N-channel 650 V , 0.125 Ω , 22 A, MDmesh™ V Power MOSFET
D²P AK, TO-220FP , I²P AK, TO-220, TO-247
Features Worldwide best R DS(on) *area Higher V DSS rating Excellent switching performance Easy to drive 100% avalanche tested High dv/dt capability
Applications Switching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W30N65M52/22 Doc ID 15331 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB/F/I/P/W30N65M5 Electrical ratings
Doc ID 15331 Rev 3 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 21 A, di/dt = 400 A/µs, VPeak < V(BR)DSS
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W30N65M5
4/22 Doc ID 15331 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
STB/F/I/P/W30N65M5 Electrical characteristics
Doc ID 15331 Rev 3 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
