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STP30N05STN/a50avaiOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN


STP30N05 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP30N05STP30N05FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP30N05 50 ..
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T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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STP30N05
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP30N05
STP30N05FI

N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
December 1996
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP30N05/FI

2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP30N05/FI

3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP30N05/FI

4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP30N05/FI

5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STP30N05/FI

6/10
ic,good price


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