STP2NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP2NA50STP2NA50FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS( ..
STP2NC60 ,N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP2NC60 STP2NC60FPV Drain-source Voltage (V = 0 ..
STP2NK100Z ,N-channel 1000 V, 6.25 Ohm, 1.85 A, TO-220 Zener-protected SuperMESH(TM) Power MOSFET
STP2NK60Z ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTF2NK60Z 600 V < 8 Ω 1.4 A 20STQ2NK60ZR-AP 600 ..
STP2NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitSTD2NK90ZSTP2NK90ZSTD2NK90Z-1V Drain-source Volt ..
STP3015L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
SZF2002HL ,Low voltage 8-bit microcontroller with 6-kbyte embedded RAM
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
STP2NA50
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP2NA50
STP2NA50FIN - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS MEDIUM CURRENT, HIGH SPEED
SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING
March 1996
ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area
1/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP2NA50/FI2/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP2NA50/FI3/6
STP2NA50/FI4/6
STP2NA50/FI5/6
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STP2NA50/FI6/6
