STP2N60 ,NSTP2N60STP2N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP2N60 600 V ..
STP2NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP2NA50STP2NA50FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS( ..
STP2NC60 ,N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP2NC60 STP2NC60FPV Drain-source Voltage (V = 0 ..
STP2NK100Z ,N-channel 1000 V, 6.25 Ohm, 1.85 A, TO-220 Zener-protected SuperMESH(TM) Power MOSFET
STP2NK60Z ,N-CHANNEL 600VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTF2NK60Z 600 V < 8 Ω 1.4 A 20STQ2NK60ZR-AP 600 ..
STP2NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitSTD2NK90ZSTP2NK90ZSTD2NK90Z-1V Drain-source Volt ..
SZF2002HL ,Low voltage 8-bit microcontroller with 6-kbyte embedded RAM
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
STP2N60
N
STP2N60
STP2N60FIN - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
December 1996
ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP2N60/FI2/10
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP2N60/FI3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP2N60/FI4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP2N60/FI5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STP2N60/FI6/10
