STP27N3LH5 ,N-channel 30 V, 0.014 Ohm, 27 A, TO-220 STripFET (TM) V Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. Static Symbol Paramet ..
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STP27N3LH5
N-channel 30 V, 0.014 Ohm, 27 A, TO-220 STripFET (TM) V Power MOSFET
March 2011 Doc ID 15617 Rev 3 1/21
STD27N3LH5, STP27N3LH5
STU27N3LH5N-channel 30 V , 0.014 Ω , 27 A, DP AK, IP AK, TO-220 ripFET™ V Power MOSFET
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Application Switching applications
DescriptionThis STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
Features
Table 1. Device summary
Contents STD27N3LH5, STP27N3LH5, STU27N3LH52/21 Doc ID 15617 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
STD27N3LH5, STP27N3LH5, STU27N3LH5 Electrical ratings
Doc ID 15617 Rev 3 3/21
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding Pulse width limited by safe operating area Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH
Table 3. Thermal resistance
Electrical characteristics STD27N3LH5, STP27N3LH5, STU27N3LH5
4/21 Doc ID 15617 Rev 3
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STD27N3LH5, STP27N3LH5, STU27N3LH5 Electrical characteristics
Doc ID 15617 Rev 3 5/21
Table 6. Switching on/off (resistive load)
Table 7. Source drain diode Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
