STP22NE10L ,NSTP22NE10L®N - CHANNEL 100V - 0.07 Ω - 22A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTP ..
STP22NF03L ,N-CHANNEL 30V 0.038 OHM 22A TO-220 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP22NM50 ,N-CHANNEL 500 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)22NM50(-1) STP22NM50FPV Drain-source Volta ..
STP22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STP22NS25Z ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)250 VDS GSV Drain- ..
STP23NM60N , N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
SZ455G , SURFACE MOUNT SILICON ZENER DIODES
SZ4562 , SURFACE MOUNT SILICON ZENER DIODES
SZ4568 , SURFACE MOUNT SILICON ZENER DIODES
SZ456C , SURFACE MOUNT SILICON ZENER DIODES
SZ456I , SURFACE MOUNT SILICON ZENER DIODES
SZ4575 , SURFACE MOUNT SILICON ZENER DIODES
STP22NE10L
N
STP22NE10LN - CHANNEL 100V - 0.07 Ω - 22A TO-220
STripFET POWER MOSFET TYPICAL RDS(on) = 0.07 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
DESCRIPTION This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS
November 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) starting Tj = 25 o C, ID =22A , VDD = 50V
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP22NE10L2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STP22NE10L3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP22NE10L4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP22NE10L5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STP22NE10L6/8
