STP20NM50FD ,N-CHANNEL 500V 0.22 OHM 20A TO-220/I2PAK FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP20NM60 ,N-CHANNEL 600V 0.25 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)20NM60(-1) STP20NM60FPV Drain-source Volta ..
STP20NM60FD ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETSTP20NM60FD - STF20NM60DSTW20NM60FDN-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247FDmesh™ POWER ..
STP20NM60FP ,N-CHANNEL 600V 0.25 OHM 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STP21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220Absolute maximum ratingsValueSymbol Parameter UnitTO-220, I²PAK, TO-220FPD²PAK, TO-247V Gate-source ..
STP21NM50N , N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP20NM50FD
N-CHANNEL 500V 0.22 OHM 20A TO-220/I2PAK FDMESH POWER MOSFET
1/9August 2002
STP20NM50FD
STB20NM50FD-1N-CHANNEL 500V- 0.22Ω -20A TO-220/I2 PAK
FDmesh™ Power MOSFET (with FAST DIODE)
(1)ISD ≤20A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*)Limited onlyby maximum temperature allowed TYPICAL RDS(on)= 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe FDmesh™ associatesall advantagesof reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode.Itis therefore strongly recom-
mendedfor bridge topologies,in particular ZVS phase-
shift converters.
APPLICATIONS ZVSPHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
s tRds(on)* Qg
STP20NM50FD/STB20NM50FD-1
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300μs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
3/9
STP20NM50FD/STB20NM50FD-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Safe Operating Area For TO-220/ I²PAK Thermal Impedance For TO-220/ I²PAK
STP20NM50FD/STB20NM50FD-1
4/9
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Capacitance VariationsGate Chargevs Gate-source Voltage
5/9
STP20NM50FD/STB20NM50FD-1
Source-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STP20NM50FD/STB20NM50FD-1
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Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
