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Partno	Mfg	Dc	Qty	Available	Descript
STP20NE06L	ST	N/a	9	avai	N-CHANNEL 60V

STP20NE06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP20NE06 STP20NE06FPV Drain-source Voltage (V = ..
STP20NE10 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 100 VDS GSV 100 VD ..
STP20NF06 ,N-CHANNEL 60VFeatures Figure 1:PackageTYPE V R IDSS DS(on) DSTP20NF06 60 V < 0.07 Ω 20 ASTF20NF06 60 V < 0.07 Ω ..
STP20NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP20NF06L STF20NF06LV Drain-source Voltage (V = ..
STP20NF20 ,N-channel 200VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, DPAK TO-220FPV Drain-source voltage (V = ..
STP20NK50Z ,N-CHANNEL 500VAPPLICATIONS

STP20NE06L
N-CHANNEL 60V
STP20NE06L
STP20NE06LFP- CHANNEL 60V- 0.06W - 20A TO-220/TO-220FP
STripFET POWER MOSFET TYPICAL RDS(on)= 0.06W EXCEPTIONAL dv/dtCAPABILITY 100%AVALANCHE TESTED LOW GATE CHARGE 100oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfetis the latest developmentof
STMicroelectronics unique” Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps thereforea re-
markable manufacturingreproducibility.
APPLICATIONS DC MOTOR CONTROL DC-DC& DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP20NE06 STP20NE06FP
VDS Drain-source Voltage (VGS =0) 60 V
VDGR Drain- gate Voltage (RGS =20kW )60 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C20 13 A Drain Current (continuous)atTc= 100o C14 9 A
IDM(•) Drain Current (pulsed) 80 80 A
Ptot Total DissipationatTc =25o C70 30 W
Derating Factor 0.47 0.2 W/oC
VISO Insulation Withstand Voltage (DC)  2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65to 175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse widthlimitedby safe operatingarea ( 1)ISD≤20A, di/dt≤ 300A/ms,VDD≤ V(BR)DSS,Tj≤ TJMAX
TYPE VDSS RDS(on) ID
STP20NE06L
STP20NE06LFPVV
<0.07W
<0.07WAA
April 1999
TO-220 TO-220FP223
1/9
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.14 5 o C/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max)
20 A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =35V)
100 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250m AVGS =0 60 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc= 125oCAA
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID= 250mA 1 V
RDS(on) Static Drain-source On
Resistance
VGS =5 V ID =10A
VGS =10V ID =10A
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
20 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs(* )Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =10 A 5 9 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS= 0 800
STP20NE06L/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
Rise Time
VDD =30V ID =10A =4.7W VGS =5V
(see test circuit, figure3)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48V ID =20A VGS =5V 14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =48V ID =20A =4.7 W VGS =5V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(* )Forward On Voltage ISD =20A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=20A di/dt= 100A/ms
VDD =30V Tj= 150oC
(see test circuit, figure5)
130) Pulsed: Pulse duration= 300ms, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Areafor TO-220 Safe Operating Areafor TO-220FP
STP20NE06L/FP
3/9
Thermal Impedancefor TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP20NE06L/FP
4/9
Gate Chargevs Gate-sourceVoltage
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistancevs Temperature
STP20NE06L/FP
5/9
Fig.1: Unclamped Inductive Load Test Circuit
Fig.3: Switching Times Test Circuits For
Resistive Load
Fig.2: Unclamped Inductive Waveform
Fig.4: Gate Chargetest Circuit
Fig.5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP20NE06L/FP
6/9

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