STP17NK40Z ,N-CHANNEL 400 VSTP17NK40Z - STP17NK40ZFPN-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FPZener-Protected SuperMESH™Powe ..
STP17NK40ZFP ,N-CHANNEL 400 VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220applicationsDescription!" 4$
STP17NK40Z -STP17NK40ZFP
N-CHANNEL 400 V
1/10October 2002
STP17NK40Z - STP17NK40ZFPN-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP17NK40Z - STP17NK40ZFP
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤15A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STP17NK40Z - STP17NK40ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP17NK40Z - STP17NK40ZFP
Output Characteristics
Thermal Impedance For TO-220
Transfer Characteristics
Safe Operating Area For TO-220FPSafe Operating Area For TO-220
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STP17NK40Z - STP17NK40ZFP
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STP17NK40Z - STP17NK40ZFP
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
