STP16NS25 ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NS25 STP16NS25FPV Drain-source Voltage (V = ..
STP16NS25FP ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220 STripFET(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, DPAK TO-220FPV Drain-source voltage 250 V ..
STP17NK40Z ,N-CHANNEL 400 VSTP17NK40Z - STP17NK40ZFPN-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FPZener-Protected SuperMESH™Powe ..
STP17NK40ZFP ,N-CHANNEL 400 VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220applicationsDescription!" 4$
STP16NS25-STP16NS25FP
N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFET
1/9May 2002
STP16NS25
STP16NS25FPN-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP
MESH OVERLAY™ MOSFET
(1) ISD≤ 16A, di/dt≤300 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX
(*) Limited only by maximum temperature allowed TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT IDEAL FOR MONITOR’s B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP16NS25 - STP16NS25FP2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP16NS25 - STP16NS25FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
STP16NS25 - STP16NS25FP4/9
Thermal Impedance for TO-220FPThermal Impedance for TO-220
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
5/9
STP16NS25 - STP16NS25FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
6/9
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
