STP16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NF06L STP16NF06LFPV Drain-source Voltage (V ..
STP16NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STP16NK65Z ,N-CHANNEL 650 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 650 VDS GSV Drain ..
STP16NS25 ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NS25 STP16NS25FPV Drain-source Voltage (V = ..
STP16NS25FP ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220 STripFET(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, DPAK TO-220FPV Drain-source voltage 250 V ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP16NF06L
N-CHANNEL 60V
1/9August 2002
STP16NF06L
STP16NF06LFPN-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) ISD ≤ 16A, di/dt ≤ 210A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
STP16NF06L/FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/9
STP16NF06L/FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STP16NF06L/FPThermal Impedance Thermal Impedance for TO-220FP
5/9
STP16NF06L/FPGate Charge vs Gate-source Voltage Capacitance Variations
STP16NF06L/FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
