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Partno	Mfg	Dc	Qty	Available	Descript
STP16NE06L	ST	N/a	50	avai	N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP16NE06L ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ POWER MOSFETTARGET DATATYP ..
STP16NF06 ,N-CHANNEL 60VSTP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FPSTripFET™ II POWER MOSFETTYPE V R I ..
STP16NF06FP ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NF06L STP16NF06LFPV Drain-source Voltage (V ..
STP16NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STP16NK65Z ,N-CHANNEL 650 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 650 VDS GSV Drain ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES

STP16NE06L
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE POWER MOSFET
TARGET DATA TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175o C OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
October 1997
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP16NE06L/FP
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP16NE06L/FP
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP16NE06L/FP
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