STP16NB25 ,NSTP16NB25STP16NB25FP®N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R ID ..
STP16NE06 ,NSTP16NE06STP16NE06FP®N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FPSTripFET™ POWER MOSFETPRELIMIN ..
STP16NE06FP ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP16NE06STP16NE06FP®N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FPSTripFET™ POWER MOSFETPRELIMIN ..
STP16NE06L ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ POWER MOSFETTARGET DATATYP ..
STP16NF06 ,N-CHANNEL 60VSTP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FPSTripFET™ II POWER MOSFETTYPE V R I ..
STP16NF06FP ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP16NB25
N
STP16NB25
STP16NB25FPN - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP
PowerMESH MOSFET TYPICAL RDS(on) = 0.220 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
March 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 16A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP16NB25/FP2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP16NB25/FP3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP16NB25/FP4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP16NB25/FP5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STP16NB25/FP6/9
