STP12NB30 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP12NB30 STP12NB30FPV Drain-source Voltage (V = ..
STP12NB30FP ,N-CHANNEL 300V 0.34 OHM 12A TO-220/TO-220FP POWERMESH MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP12NK80Z ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP12NK80Z - STB12NK80ZSTW12NK80Z2N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D PAK / TO-247Zener-Prote ..
STP12NM50 ,N-CHANNEL 500VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STP12NM50FDFP ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET
STP12NM50FP ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP12NB30-STP12NB30FP
N-CHANNEL 300V 0.34 OHM 12A TO-220/TO-220FP POWERMESH MOSFET
1/7June 2002
STP12NB30
STP12NB30FPN-CHANNEL 300V - 0.34Ω - 12A TO-220/TO-220FP
PowerMESH™ MOSFET
(1) ISD≤ 60A, di/dt≤400 A/μs, VDD≤ 24V, Tj≤TjMAX
(*)Limited only by maximum temperature allowed TYPICAL RDS(on) = 0.34Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP12NB30 - STP12NB30FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/7
STP12NB30 - STP12NB30FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP12NB30 - STP12NB30FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
5/7
STP12NB30 - STP12NB30FP
STP12NB30 - STP12NB30FP
