STL9NK30Z ,N-CHANNEL 300VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)300 VDS GSV Drain-g ..
STLA01PUR ,50 mA stand-alone linear LED driverPin configuration Figure 2. Pin connections (top view)Table 2. Pin descriptionPin n° Symbol Name a ..
STLC1502D ,STLC1502Block diagram.......45 System Overview .45.1 ARM7 domain .....45.2 D950 domain.......55.3 Clocks .. ..
STLC2150 ,BLUETOOTH RADIO TRANSCEIVERElectrical characteristics, rated for the operating rangeSymbol Parameter Min Max UnitV High Level ..
STLC2415 ,BLUETOOTH BASEBAND WITH INTEGRATED FLASHAbsolute Maximum RatingsSymbol Conditions Min Max UnitV Supply voltage baseband core V 0.5 2.5 VDD ..
STLC3055 ,WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUITAbsolute Maximum RatingsSymbol Parameter Value UnitV Positive Supply Voltage -0.4 to +13 VposA/BGND ..
SY10E151JI , 6-BIT D REGISTER
SY10E157JCTR , QUAD 2:1 MULTIPLEXER
SY10E166JC , 9-BIT MAGNITUDE COMPARATOR
SY10E167JC , 6-BIT 2:1 MUX-REGISTER
SY10E171JC , 3-BIT 4:1 MULTIPLEXER
SY10E171JC , 3-BIT 4:1 MULTIPLEXER
STL9NK30Z
N-CHANNEL 300V
1/8August 2002
STL9NK30ZN-CHANNEL 300V- 0.36Ω- 9A PowerFLAT™
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.36Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS LIGHTING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STL9NK30Z2/8
ABSOLUTE MAXIMUM RATINGS
THERMAL DATANote:1. The valueis rated accordingto Rthj-F. When Mountedon FR-4 Boardof 1inch2,2ozCu Pulse width limitedby safe operating area ISD<9A, di/dt<300A/μs, VDD
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/8
STL9NK30Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STL9NK30Z
4/8
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Transconductance
5/8
STL9NK30Z
Normalized Gate Thereshold Voltagevs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
Normalized BVDSSvs Temperature
STL9NK30Z
6/8
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
