STL65N3LLH5 ,N-channel 30 V, 0.0048 Ohm, 19 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage 30 VDSV Gate-source volta ..
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SY10E104JY , QUINT 2-INPUT AND/NAND GATE
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SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)
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SY10E111JY , 1:9 DIFFERENTIAL CLOCK DRIVER WITH ENABLE
STL65N3LLH5
N-channel 30 V, 0.0048 Ohm, 19 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET
December 2011 Doc ID 14299 Rev 5 1/16
STL65N3LLH5N-channel 30 V , 0.0048 Ω , 19 A, PowerFLA T™ 5x6
STripFET™ V Power MOSFET
Features R DS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Applications Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
The value is rated according Rthj-pcb
Table 1. Device summary
Contents STL65N3LLH52/16 Doc ID 14299 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STL65N3LLH5 Electrical ratings
Doc ID 14299 Rev 5 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according to Rthj-c The value is rated according to Rthj-pcb Pulse width limited by safe operating area
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche data
Electrical characteristics STL65N3LLH5
4/16 Doc ID 14299 Rev 5
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic
STL65N3LLH5 Electrical characteristics
Doc ID 14299 Rev 5 5/16
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STL65N3LLH5 Doc ID 14299 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance
STL65N3LLH5 Electrical characteristics
Doc ID 14299 Rev 5 7/16
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuits STL65N3LLH5 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
