N-channel 30 V, 0.0048 Ohm, 19 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET The STL65N3LLH5 is a power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on the available knowledge:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Type:** N-channel MOSFET
- **Technology:** MDmesh™ Low Voltage
- **Drain-to-Source Voltage (VDS):** 30 V
- **Gate-to-Source Voltage (VGS):** ±20 V
- **Continuous Drain Current (ID):** 65 A
- **Pulsed Drain Current (IDM):** 260 A
- **Power Dissipation (Ptot):** 125 W
- **RDS(on) (Max):** 3.0 mΩ (at VGS = 10 V)
- **RDS(on) (Max):** 3.5 mΩ (at VGS = 4.5 V)
- **Threshold Voltage (VGS(th)):** 1.5 V (Min) – 2.5 V (Max)
- **Total Gate Charge (Qg):** 60 nC (Typ)
- **Input Capacitance (Ciss):** 3500 pF (Typ)
- **Output Capacitance (Coss):** 800 pF (Typ)
- **Reverse Transfer Capacitance (Crss):** 70 pF (Typ)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** PowerFLAT™ 5x6
### **Description:**
The STL65N3LLH5 is a low-voltage N-channel MOSFET designed for high-efficiency power switching applications. It utilizes ST’s MDmesh™ Low Voltage technology, which provides low on-resistance and high switching performance. The device is suitable for applications such as DC-DC converters, motor control, and power management in automotive and industrial systems.
### **Features:**
- Low RDS(on) for reduced conduction losses
- High current capability (65 A continuous)
- Optimized for high-frequency switching
- Low gate charge for improved efficiency
- Avalanche ruggedness for reliability
- Lead-free and RoHS compliant
This information is based on the manufacturer's datasheet and technical documentation. For detailed application guidelines, refer to STMicroelectronics' official resources.
