STL35NF10 ,N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STL50NH3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On /OffSymbol Parameter ..
STL5NK65Z ,N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)650 VDS GSV Drain- ..
STL65N3LLH5 ,N-channel 30 V, 0.0048 Ohm, 19 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage 30 VDSV Gate-source volta ..
STL6NK55Z ,N-CHANNEL 550VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)550 VDS GSV Drain- ..
STL70N4LLF5 ,Automotive-grade N-channel 40 V, 6.1 mOhm, 18 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
SY10474-4FCF , 1K x 4 ECL RAM
SY10474-5FCS , 1K x 4 ECL RAM
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E107JC , QUINT 2-INPUT XOR/XNOR GATE
SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)
STL35NF10
N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
PRELIMINARY DATA
STL35NF10N-CHANNEL 100V - 0.025Ω - 35A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET TYPICAL RDS(on) = 0.025Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
DESCRIPTIONThis Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allows a significant reduction in
board space without compromising performance.
APPLICATIONS HIGH EFFICIENCY ISOLATED DC/DC
CONVETERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 35A, VDD = 50V
STL35NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
STL35NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STL35NF10
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For Resistive Load
STL35NF10
STL35NF10
