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STL28NF3LLSTN/a3000avaiN-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET


STL28NF3LL ,N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
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STL28NF3LL
N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
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PRELIMINARY DATA

November 2002
STL28NF3LL

N-CHANNEL 30V- 0.0055Ω -28A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
(1) StartingTj= 25°C,ID= 14A, VDD =18V TYPICAL RDS(on)= 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
DESCRIPTION

This Power MOSFETis the second generationof
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allowsa significant reductionin
board space without compromising performance.
APPLICATIONS
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limitedby safe operating area
(#) Limitedby Wire Bonding
STL28NF3LL
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THERMAL DATA

(*) When mountedon 1inch² FR4 Board,2ozofCu,t ≤10 sec.
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STL28NF3LL
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STL28NF3LL
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Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
STL28NF3LL
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STL28NF3LL
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