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Partno	Mfg	Dc	Qty	Available	Descript
STL160N3LLH6	ST	N/a	50	avai	N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET(TM) H6 Power MOSFET in a PowerFLAT(TM) 5x6 package

STL160N3LLH6 ,N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET(TM) H6 Power MOSFET in a PowerFLAT(TM) 5x6 packageElectrical characteristics(T = 25 °C unless otherwise specified).CASE Table 5. On/off statesSymbol ..
STL17N3LLH6 ,N-channel 30 V, 0.0038 Ohm typ., 17 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol P ..
STL20NM20N ,N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STL28NF3LL ,N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STL34NF06 ,N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STL35NF10 ,N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SY10474-4FCF , 1K x 4 ECL RAM
SY10474-5FCS , 1K x 4 ECL RAM
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E107JC , QUINT 2-INPUT XOR/XNOR GATE
SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)

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STL160N3LLH6
N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET(TM) H6 Power MOSFET in a PowerFLAT(TM) 5x6 package
September 2014 DocID18223 Rev 6 1/15
STL160N3LLH6
N-channel 30 V , 0.0011 Ω typ., 45 A STripFET™ H6
Power MOSFET in a PowerFLA T™ 5x6 package
Datasheet − production data
Features Very low on-resistance Very low switching gate charge High avalanche ruggedness Low gate drive power loss
Applications Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
technology, with a new trench gate structure. The
resulting Power MOSFET exhibits a very low
RDS(on) in all packages.

The value is rated according to Rthj-pcb
Table 1. Device summary
Contents STL160N3LLH6
2/15 DocID18223 Rev 6
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DocID18223 Rev 6 3/15
STL160N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according to Rthj-c. The value is rated according to Rthj-pcb. Pulse width limited by safe operating area.
Table 3. Thermal data When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Table 4. Avalanche data
Electrical characteristics STL160N3LLH6
4/15 DocID18223 Rev 6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 5. On/off states
Table 6. Dynamic
Table 7. Switching times
DocID18223 Rev 6 5/15
STL160N3LLH6 Electrical characteristics
Table 8. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration=300µs, duty cycle 1.5%.