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Partno	Mfg	Dc	Qty	Available	Descript
STL11N3LLH6	STM	N/a	20381	avai	N-channel 30 V, 0.006 Ohm typ., 11 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

STL11N3LLH6 ,N-channel 30 V, 0.006 Ohm typ., 11 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol P ..
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STL11N3LLH6
N-channel 30 V, 0.006 Ohm typ., 11 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package
May 2013 DocID17755 Rev 2 1/14
STL11N3LLH6
N-channel 30 V, 0.006 Ω typ., 11 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
Features RDS(on) * Qg industry benchmark Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge
Applications Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
The value is rated according Rthj-pcb.
Table 1. Device summary
Contents STL11N3LLH6
2/14 DocID17755 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
DocID17755 Rev 2 3/14
STL11N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according Rthj-pcb. Pulse width limited by safe operating area. The value is rated according Rthj-c.
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Steady state.
Electrical characteristics STL11N3LLH6
4/14 DocID17755 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
Table 6. Switching times
DocID17755 Rev 2 5/14
STL11N3LLH6 Electrical characteristics
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration=300µs, duty cycle 1.5%.