STL105NS3LLH7 ,N-channel 30 V, 0.0032 Ohm typ., 27 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STL11N3LLH6 ,N-channel 30 V, 0.006 Ohm typ., 11 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol P ..
STL128D ,High voltage fast switching NPN power transistorElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitV = 700 V 100 µAColle ..
STL150N3LLH5 ,N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
STL160N3LLH6 ,N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET(TM) H6 Power MOSFET in a PowerFLAT(TM) 5x6 packageElectrical characteristics(T = 25 °C unless otherwise specified).CASE Table 5. On/off statesSymbol ..
STL17N3LLH6 ,N-channel 30 V, 0.0038 Ohm typ., 17 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol P ..
SY100S834ZG , (÷1, ÷2, ÷4) OR (÷2, ÷4, ÷8) CLOCK GENERATION CHIP
SY100S834ZG , (÷1, ÷2, ÷4) OR (÷2, ÷4, ÷8) CLOCK GENERATION CHIP
SY100S834ZG , (÷1, ÷2, ÷4) OR (÷2, ÷4, ÷8) CLOCK GENERATION CHIP
SY10474-4FCF , 1K x 4 ECL RAM
SY10474-5FCS , 1K x 4 ECL RAM
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
STL105NS3LLH7
N-channel 30 V, 0.0032 Ohm typ., 27 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6
November 2013 DocID024624 Rev 3 1/16
STL105NS3LLH7N-channel 30 V, 0.0033 Ω typ., 27 A STripFET™ VII DeepGATE™
Power MOSFET s plus monolithic Schottky in a PowerFLAT™ 5x6
Datasheet - preliminary data
Features Very low on-resistance Very low Qg Avalanche High ruggedness Embedded Schottky diode
Applications Switching applications
DescriptionThis device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
Table 1. Device summary
Contents STL105NS3LLH72/16 DocID024624 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID024624 Rev 3 3/16
STL105NS3LLH7 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings This value is rated according to Rthj-c Pulse width limited by safe operating area. This value is rated according to Rthj-pcb
Table 3. Thermal data When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec
Electrical characteristics STL105NS3LLH7
4/16 DocID024624 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic
Table 6. Switching times
DocID024624 Rev 3 5/16
STL105NS3LLH7 Electrical characteristics
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
