STK2NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTK2NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK2NA60 600 V < ..
STK3042 ,AUDIO POWER AMPLIFIERSANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
STK3042III ,2ch 40-60W audio power amplifierSANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
STK3062 ,AUDIO POWER AMPLIFIERSANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
STK3062III ,Thick Film Hybrid Integrated Circuit 2-channel Voltage Amplifier For 60 to 70W AF Power AmplifierFeatures. The AC amp circuit configuration eliminates the need to use the externalmiddle-point adju ..
STK3102III ,2-Channel Voltage Amplifier for 90 to 100W AF Power Amplifier (Dual Supplies)SANYO SEMICONDUCTOR CORP " D " ?‘197075 001].“in [JTLI ITSAJSTK Audio Power AmplifierSTK3042 Ill) S ..
SW259 ,GaAs SPST Switch DC
SW-259 ,GaAs SPST Switch DC
SW-259 ,GaAs SPST Switch DC
SW-259 ,GaAs SPST Switch DC
SW-259 ,GaAs SPST Switch DC
SW-259 ,GaAs SPST Switch DC
STK2NA60
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STK2NA60N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 7.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
November 1996
ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area
1/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STK2NA602/10
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STK2NA603/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STK2NA604/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STK2NA605/10
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
STK2NA606/10
