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STW15NA50STN/a1465avaiOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STH15NA50FISTN/a27avaiOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN


STW15NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH ..
STW15NB50 ,N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTORSTW15NB50STH15NB50FI®N-CHANNEL 500V - 0.33Ω - 14.6A -T0-247/ISOWATT218 PowerMESH™ MOSFETTYPE V R ..
STW15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STW15NK90Z ,N-CHANNEL 900V 0.40 OHM 15A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)900 VDS GSV Drain-g ..
STW16NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATA TYPE V R IDSS DS(on) ..
STW18NB40 ,N-CHANNEL 400V 0.19 OHM 18.4A TO-247/ISOWATT218 POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW18NB40 STH18NB40FIV Drain-source Voltage (V = ..
T7933 ,ROW DRIVER LSI FOR A DOT MATRIX GRAPHIC LCDT7933 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T7933 ROW DRIVER LSI FOR A DOT M ..
T7NS1D4-48 , Miniature Power PCB Relay T7N / T7N-WG
T7NV5D4-24-WG-A , Miniature Power PCB Relay
T8003 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T8008 , COMMON MODE CHOKE CATALOG Suited for LAN and Telecom Applications
T810 ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..


STH15NA50FI-STW15NA50
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STH15NA50/FI
STW15NA50

N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
November 1996
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
1/11
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STH15NA50/FI - STW15NA50

2/11
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218
STH15NA50/FI - STW15NA50

3/11
Thermal Impedeance For TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Output Characteristics
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Transfer Characteristics
STH15NA50/FI - STW15NA50

4/11
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STH15NA50/FI - STW15NA50

5/11
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STH15NA50/FI - STW15NA50

6/11
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