STH10NC60FI ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW10NC60 STH10NC60FIV Drain-source Voltage (V = ..
STH13NB60FI ,N-CHANNEL 600VSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STH15NA50FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH ..
STH16NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA40STH16NA40FI®N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218POWER MOS TRANSISTORSPRELIMI ..
STH18NB40FI ,N-CHANNEL 400VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STH51005N ,1300 nm Laser, High Power1300 nm Laser in Coaxial Package with SM-Pigtail, STH 51004XHigh Power STH 51005X• Designed for app ..
SVC201SPA ,Electronic Tuning SystemFeatures Package Dimensions•The SVC201SPA, 201Y are varactor diodes ofunit : mmhyper abrupt junctio ..
SVC201Y ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · The SVC201SPA, 201Y are varactor diodes of hyperunit:mmabrupt junctio ..
SVC202 ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · Twin type FM electronic tuning-use varactor diodeunit:mmwhich excels ..
SVC202SPA ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions•Twin type FM electronic tuning-use varactor diodeunit : mmwhich excels ..
SVC203CP ,Varactor Diode for FM Low-Voltage Electronic Tuning UseFeatures• Dual type with a good linearity of C-V characteristic. Excels in large input characterist ..
SVC203CP ,Varactor Diode for FM Low-Voltage Electronic Tuning UseAbsolute Maximum Ratings at Ta=25°C unitReverse Voltage V 16 VRJunction Temperature Tj 125 °CStorag ..
STH10NC60FI
N-CHANNEL 600V
1/9February 2002
STW10NC60
STH10NC60FIN-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218
PowerMesh™II MOSFET
(1)ISD ≤10A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*) Limited only by Maximum Temperature Allowed TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STW10NC60 / STH10NC60FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STW10NC60 / STH10NC60FI
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for ISOWATT218Safe Operating Area for TO-247
STW10NC60 / STH10NC60FI
Thermal Impedance for ISOWATT218Thermal Impedance for TO-247
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer Characteristics
5/9
STW10NC60 / STH10NC60FI
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STW10NC60 / STH10NC60FI
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
