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Partno	Mfg	Dc	Qty	Available	Descript
STGW40N120KD	ST	N/a	11	avai	40 A, 1200 V short circuit rugged IGBT with Ultrafast diode

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STGW40N120KD
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode

February 2012 Doc ID 15360 Rev 5 1/15
STGW40N120KD
STGWA40N120KD
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling
diode
Applications Motor control
Description
This high voltage and short-circuit rugged IGBT
utilizes the advanced PowerMESH™ process
resulting in an excellent trade-off between
switching performance and low ON-state
behavior.

Figure 1. Internal schematic diagram
Table 1. Device summary

Contents STGW40N120KD, STGWA40N120KD
2/15 Doc ID 15360 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGW40N120KD, STGWA40N120KD Electrical ratings
Doc ID 15360 Rev 5 3/15

1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula: Vclamp = 80% of VCES, Tj =125 °C, RG=10 Ω, VGE=15 V Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal dataCTC() T jmax() TC–
Rthjc– VCEsat() max() Tjmax()IC TC(), ()×--- ---------------------------------- --------------------------------------------------- ---------------=

Electrical characteristics STGW40N120KD, STGWA40N120KD
4/15 Doc ID 15360 Rev 5
2 Electrical characteristics
TJ = 25 °C unless otherwise specified.



Table 4. Static
Table 5. Dynamic
Table 6. Switching on/off (inductive load)
STGW40N120KD, STGWA40N120KD Electrical characteristics
Doc ID 15360 Rev 5 5/15

Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 16. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode

Electrical characteristics STGW40N120KD, STGWA40N120KD
6/15 Doc ID 15360 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Collector-emitter on voltage vs.
collector current
Figure 5. Collector-emitter on voltage vs.
temperature
Figure 6. Gate charge vs. gate-source
voltage
Figure 7. Capacitance variations
STGW40N120KD, STGWA40N120KD Electrical characteristics
Doc ID 15360 Rev 5 7/15

Figure 8. Normalized gate threshold voltage
vs. temperature
Figure 9. Normalized breakdown voltage vs.
temperature
Figure 10. Switching losses vs. collector
current
Figure 11. Switching losses vs. gate
resistance
Figure 12. Switching losses vs. temperature Figure 13. Thermal impedance

Electrical characteristics STGW40N120KD, STGWA40N120KD
8/15 Doc ID 15360 Rev 5
Figure 14. Turn-off SOA Figure 15. Forward voltage drop vs. forward
current