STGW35NB60SD ,Low Drop "S" seriesElectrical characteristics STGW35NB60SDTable 5. Switching on/off (inductive load) Symbol Parameter ..
STGW35NC120HD ,35 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW38IH130D ,33 AElectrical characteristicsT = 25 °C unless otherwise specified.JTable 4. StaticSymbol Parameter Tes ..
STGW39NC60VD ,40 A, 600 V, very fast IGBTElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STGW40N120KD ,40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeElectrical characteristicsT = 25 °C unless otherwise specified.J Table 4. StaticSymbol Par ..
STGW40NC60V ,N-CHANNEL 40AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
SUT562EF , Epitaxial planar NPN silicon transistor
STGW35NB60SD
Low Drop "S" series
Rev 1
November 2005 1/13
STGW35NB60SDN-CHANNEL 35A - 600V - TO-247
Low Drop PowerMESH™ IGBT
General features LOW ON-VOLTAGE DROP (VCEsat) LOW INPUT CAPACITANCE HIGH CURRENT CAPABILITY
DescriptionUsing the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances.
Applications LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS
Order codes
Internal schematic diagram
1 Electrical ratings
STGW35NB60SD2/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Table 2. Thermal resistance
STGW35NB60SD 2 Electrical characteristics
3/13
2 Electrical characteristics(TCASE = 25 °C unless otherwise specified)
Table 3. Static
Table 4. Dynamic
2 Electrical characteristics
STGW35NB60SD4/13
Table 5. Switching on/off (inductive load)
Table 6. Switching energy (inductive load)
STGW35NB60SD 2 Electrical characteristics
5/13
Table 7. Collector-emitter diode(1)Pulse width limited by max. junction temperature
(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× --------------------------------------------------------------------------------------------------=
2 Electrical characteristics
STGW35NB60SD6/13
2.1 Electrical characteristics (curves)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. Transconductance Figure 4. Normalized Collector-Emitter On
Voltage vs Temperature
Figure 5. Collector-Emitter on Voltage vs
Collector Current
Figure 6. Gate Threshold vs Temperature
STGW35NB60SD 2 Electrical characteristics
7/13
Figure 7. Normalized Breakdown Voltage vs
Temperature
Figure 8. Gate Charge vs Gate-Emitter
Voltage
Figure 9. Capacitance Variations Figure 10. Switching Losses vs Gate Charge
Figure 11. Switching Losses vs Temperature Figure 12. Switching Losses vs Collector
Current
