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Partno	Mfg	Dc	Qty	Available	Descript
STGW30NC60VD	ST	N/a	5000	avai	40 A, 600 V, very fast IGBT with Ultrafast diode

STGW30NC60VD ,40 A, 600 V, very fast IGBT with Ultrafast diodeElectrical characteristicsT = 25 °C unless otherwise specified.J Table 4. StaticSymbol Parameter Te ..
STGW30NC60W ,30 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0)600 VCES GE(1 ..
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STGW35NC120HD ,35 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW38IH130D ,33 AElectrical characteristicsT = 25 °C unless otherwise specified.JTable 4. StaticSymbol Parameter Tes ..
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STGW30NC60VD
40 A, 600 V, very fast IGBT with Ultrafast diode
February 2011 Doc ID 13241 Rev 5 1/13
STGW30NC60VD
40 A, 600 V , very fast IGBT with Ultrafast diode
Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode
Applications High frequency inverters, UPS Motor drive SMPS and PFC in both hard switch and
resonant topologies
Description
This device utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.

Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGW30NC60VD
2/13 Doc ID 13241 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STGW30NC60VD Electrical ratings
Doc ID 13241 Rev 5 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula: Pulse width limited by maximum junction temperature and turn-off within RBSOA Vclamp = 80 % VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V
Table 3. Thermal dataCTC() T jmax()TC–thjc– VCEsat() max()T jmax()ICTC(), ()×------------------ ---------------------------------- ----------------- ---------------- ------------------=
Electrical characteristics STGW30NC60VD
4/13 Doc ID 13241 Rev 5
2 Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 4. Static
Table 5. Dynamic
Table 6. Switching on/off (inductive load)
STGW30NC60VD Electrical characteristics
Doc ID 13241 Rev 5 5/13
Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
Table 8. Collector-emitter diode
Table 6. Switching on/off (inductive load)
Electrical characteristics STGW30NC60VD
6/13 Doc ID 13241 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Trans conductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Collector-emitter on voltage vs
collector current
Figure 7. Normalized gate threshold vs
temperature
STGW30NC60VD Electrical characteristics
Doc ID 13241 Rev 5 7/13
Figure 8. Normalized breakdown voltage vs
temperature
Figure 9. Gate charge vs. gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs collector
current