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Partno	Mfg	Dc	Qty	Available	Descript
STGW30N120KD	ST	N/a	1680	avai	30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

STGW30N120KD ,30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
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STGW30NC60W ,30 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0)600 VCES GE(1 ..
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STGW30N120KD
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
February 2012 Doc ID 14394 Rev 5 1/15
STGW30N120KD
STGWA30N120KD
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged with Ultrafast free-wheeling
diode
Applications Motor control
Description
This high voltage and short-circuit rugged IGBT
utilizes the advanced PowerMESH™ process
resulting in an excellent trade-off between
switching performance and low ON-state
behavior.

Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGW30N120KD, STGWA30N120KD
2/15 Doc ID 14394 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGW30N120KD, STGWA30N120KD Electrical ratings
Doc ID 14394 Rev 5 3/15
1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula: Vclamp = 80% of VCES, Tj =125 °C, RG=10 Ω, VGE=15 V Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistanceCTC() T jmax() TC–
Rthjc– VCEsat() max() Tjmax()IC TC(), ()×--- ---------------------------------- --------------------------------------------------- ---------------=
Electrical characteristics STGW30N120KD, STGWA30N120KD
4/15 Doc ID 14394 Rev 5
2 Electrical characteristics
TCASE=25 °C unless otherwise specified.
Table 4. Static
Table 5. Dynamic
STGW30N120KD, STGWA30N120KD Electrical characteristics
Doc ID 14394 Rev 5 5/15
Table 6. Switching on/off (inductive load)
Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Electrical characteristics STGW30N120KD, STGWA30N120KD
6/15 Doc ID 14394 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs.
temperature
Figure 6. Gate charge vs. gate-source
voltage
Figure 7. Capacitance variations
STGW30N120KD, STGWA30N120KD Electrical characteristics
Doc ID 14394 Rev 5 7/15
Figure 8. Normalized gate threshold voltage
vs. temperature
Figure 9. Collector-emitter on voltage vs.
collector current
Figure 10. Normalized breakdown voltage vs.
temperature
Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
Electrical characteristics STGW30N120KD, STGWA30N120KD
8/15 Doc ID 14394 Rev 5
Figure 14. Thermal impedance Figure 15. Turn-off SOA
Figure 16. Forward voltage drop vs. forward
current