STGW20NB60HD ,N-CHANNEL 20ASTGW20NB60HD®N-CHANNEL 20A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW20NB60HD 600 V ..
STGW20NC60V ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW20NC60VD ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW30N120KD ,30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW30NB60H ,N-CHANNEL 30ASTGW30NB60H®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60H 600 V < ..
STGW30NB60HD ,N-CHANNEL 30ASTGW30NB60HD®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60HD 600 V ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGW20NB60HD
N-CHANNEL 20A
STGW20NB60HDN-CHANNEL 20A - 600V TO-247
PowerMESH IGBT HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
June 1999
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGW20NB60HD2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
COLLECTOR-EMITTER DIODE(•) Pulse width limited by max. junction temperature
(�) Include recovery losses on the STTA2006 freewheeling diode
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGW20NB60HD3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGW20NB60HD4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGW20NB60HD5/8
Switching Off Safe Operating Area Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGW20NB60HD6/8
