STGP12NB60H ,N-CHANNEL 12AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STGP12NB60KD ,N-CHANNEL 18AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STGP14NC60KD ,14 A, 600 V short-circuit rugged IGBTElectrical characteristics(T =25 °C unless otherwise specified)j Table 4. StaticSymbol Parameter Te ..
STGP19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeApplicationsD²PAKTO-220■ High frequency motor drives■ SMPS and PFC in both hard switch and resonant ..
STGP19NC60KD ,short circuit rugged IGBTElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STGP6NC60HD ,Very fast "H" seriesElectrical characteristics(T =25°C unless otherwise specified)CASETable 3. StaticSymbol Parameter T ..
SUR566EF , Epitaxial Planar Type NPN Silicon Transistor
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
STGP12NB60H
N-CHANNEL 12A
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STGP12NB60HN-CHANNEL 12A - 600V − TO-220
PowerMESH™ IGBT HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE
DESCRIPTIONUsing the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES UPS
ABSOLUTE MAXIMUM RATINGS
STGP12NB60H
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
SWITCHING ON
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STGP12NB60H
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING OFF
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Thermal Impedance
STGP12NB60H
Transconductance
Transfer CharacteristicsOutput Characteristics
Collector-Emitter On Voltage vs Collettor Current
Collector-Emitter On Voltage vs Temperature
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STGP12NB60H
Normalized Breakdown Voltage vs Temperature
Total Switching Losses vs Temperature
Total Switching Losses vs Gate ResistanceGate Charge vs Gate-Emitter Voltage
Capacitance Variations
Total Switching Losses vs Collector Current
STGP12NB60H
Switching Off Safe Operating Area
