STGP8NC60KD ,New short circuit rugged "K" seriesAbsolute maximum ratingsValueSymbol Parameter UnitD²PAKDPAK TO-220FPTO-220V Collector-emitter volta ..
STGW20NB60HD ,N-CHANNEL 20ASTGW20NB60HD®N-CHANNEL 20A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW20NB60HD 600 V ..
STGW20NC60V ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW20NC60VD ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW30N120KD ,30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW30NB60H ,N-CHANNEL 30ASTGW30NB60H®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60H 600 V < ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
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SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGF8NC60KD-STGP8NC60KD
New short circuit rugged "K" series
April 2008 Rev 2 1/18
STGB8NC60KD - STGD8NC60KD
STGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBT
Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction
susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10 µs
Applications High frequency motor controls SMPS and PFC in both hard switch and
resonant topologies Motor drivers
DescriptionThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD2/18
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula: Vclamp = 80% (VCES), VGE=15 V, RG=10 Ω, TJ=150 °C Pulse width limited by max junction temperature allowed
Table 3. Thermal resistanceCTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× ------------------------------------------------------------------------------------------------------=
Electrical characteristics STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. Static Pulse duration = 300 us, duty cycle 1.5 %
Table 5. Dynamic
Table 6. Switching on/off (inductive load)
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical characteristics
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Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Table 6. Switching on/off (inductive load) (continued)
Electrical characteristics STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
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2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical characteristics
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Figure 8. Normalized gate threshold voltage
vs temperature
Figure 9. Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
Electrical characteristics STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD
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Figure 14. Thermal impedance for TO-220/
D²PAK
Figure 15. Turn-off SOA
Figure 16. Forward voltage drop versus
forward current
Figure 17. Thermal impedance for DPAK
Figure 18. Thermal impedance for TO-220FP
STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Test circuit
9/18 Test circuit
Figure 19. Test circuit for inductive load
switching
Figure 20. Gate charge test circuit
Figure 21. Switching waveform Figure 22. Diode recovery time waveform