STGF10NB60SD ,N-CHANNEL 600V 10A TO-220FP POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 600 VCES GSVR ..
STGF10NC60KD ,6 A, 600 V short-circuit rugged IGBTFeaturesTABTAB■ Lower on voltage drop (V )CE(sat)3■ Lower C / C ratio (no cross-conduction RES IES1 ..
STGF19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeAbsolute maximum ratingsValueSymbol Parameter UnitTO-220TO-220FP TO-247D²PAKV Collector-emitter vol ..
STGF19NC60KD ,short circuit rugged IGBTAbsolute maximum ratingsValue UnitSymbol ParameterD²PAKTO-220FPTO-220V Collector-emitter voltage (V ..
STGF20NB60S ,N-CHANNEL 13AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/Off Symbol Parameter ..
STGF7NC60HD ,N-CHANNEL 7AAbsolute Maximum ratingsSymbol Parameter Value UnitSTGP7NC60HDSTGF7NC60HDSTGB7NC60HDV Collector-Emi ..
SUR534H , Epitaxial planar PNP silicon transistor
SUR535H , Epitaxial planar PNP silicon transistor
SUR537H , Epitaxial planar PNP silicon transistor
SUR541EF , NPN Epitaxial Planar Silicon Transistor
SUR542EF , Epitaxial Planar Type NPN Silicon Transistor
SUR543EF , Epitaxial Planar Type NPN Silicon Transistor
STGF10NB60SD
N-CHANNEL 600V 10A TO-220FP POWERMESH IGBT
1/8June 2003
STGF10NB60SDN-CHANNEL 10A- 600V TO-220FP
PowerMESH™ IGBT
(�) Pulse widthlimitedby safe operating area HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTIONUsing the latest high voltage technology basedona
patented strip layout, STMicroelectronics has
designedan advanced familyof IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifiesa family
optimized achieve minimum on-voltage dropfor low
frequency applications (<1kHz).
APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
STGF10NB60SD2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/8
STGF10NB60SD
Switching Off Safe Operating AreaSWITCHING ON
SWITCHING OFF
COLLECTOR-EMITTER DIODE
(�)Pulsed: Pulse duration=300μs, duty cycle1.5%.
(1)Pulse width limitedby max. junction temperature.
(**)Losses Include AlsotheTail
Thermal Impedance
STGF10NB60SD4/8
Gate Threshold Voltagevs
Transconductance
Transfer CharacteristicsOutput Characteristics
Collector-Emitter On Voltagevs Temperature
5/8
STGF10NB60SD
Off Off
Gate Chargevs Gate-Emitter VoltageCapacitance Variations
Normalized Break-down Voltagevs Temp.
STGF10NB60SD6/8
Emitter-Collector Diode Characteristics
Fig.2: Test Circuit For Inductive Load Switching
Fig.1: Gate Charge test Circuit
