STGE50NB60HD ,N-CHANNEL 50ASTGE50NB60HD®N-CHANNEL 50A - 600V ISOTOPPowerMESH™ IGBTPRELIMINARY DATATYPE V V ICES CE(sat) CSTG ..
STGF10NB60SD ,N-CHANNEL 600V 10A TO-220FP POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 600 VCES GSVR ..
STGF10NC60KD ,6 A, 600 V short-circuit rugged IGBTFeaturesTABTAB■ Lower on voltage drop (V )CE(sat)3■ Lower C / C ratio (no cross-conduction RES IES1 ..
STGF19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeAbsolute maximum ratingsValueSymbol Parameter UnitTO-220TO-220FP TO-247D²PAKV Collector-emitter vol ..
STGF19NC60KD ,short circuit rugged IGBTAbsolute maximum ratingsValue UnitSymbol ParameterD²PAKTO-220FPTO-220V Collector-emitter voltage (V ..
STGF20NB60S ,N-CHANNEL 13AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/Off Symbol Parameter ..
SUR532H , Epitaxial planar PNP silicon transistor
SUR534H , Epitaxial planar PNP silicon transistor
SUR535H , Epitaxial planar PNP silicon transistor
SUR537H , Epitaxial planar PNP silicon transistor
SUR541EF , NPN Epitaxial Planar Silicon Transistor
SUR542EF , Epitaxial Planar Type NPN Silicon Transistor
STGE50NB60HD
N-CHANNEL 50A
STGE50NB60HDN-CHANNEL 50A - 600V ISOTOP
PowerMESH IGBT
PRELIMINARY DATA HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
June 1999
1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGE50NB60HD2/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
COLLECTOR-EMITTER DIODE(•) Pulse width limited by max. junction temperature
(�) Include recovery losses on the STTA2006 freewheeling diode
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
STGE50NB60HD3/6
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGE50NB60HD4/6
STGE50NB60HD5/6
. consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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STGE50NB60HD6/6
