STGD5NB120SZ ,N-CHANNEL 5AAbsolute Maximum ratingsSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 1200 VCES GS ..
STGD7NB60ST4 ,N-CHANNEL 7ASTGD7NB60S®N-CHANNEL 7A - 600V DPAK Power MESH™ IGBTTYPE V V ICES CE(sat) CSTGD7NB60S 600 V < 1.6 ..
STGE50NB60HD ,N-CHANNEL 50ASTGE50NB60HD®N-CHANNEL 50A - 600V ISOTOPPowerMESH™ IGBTPRELIMINARY DATATYPE V V ICES CE(sat) CSTG ..
STGF10NB60SD ,N-CHANNEL 600V 10A TO-220FP POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 600 VCES GSVR ..
STGF10NC60KD ,6 A, 600 V short-circuit rugged IGBTFeaturesTABTAB■ Lower on voltage drop (V )CE(sat)3■ Lower C / C ratio (no cross-conduction RES IES1 ..
STGF19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeAbsolute maximum ratingsValueSymbol Parameter UnitTO-220TO-220FP TO-247D²PAKV Collector-emitter vol ..
SUR528H , Epitaxial planar NPN silicon transistor
SUR530H , Epitaxial planar PNP silicon transistor
SUR531H , Epitaxial planar PNP silicon transistor
SUR532H , Epitaxial planar PNP silicon transistor
SUR534H , Epitaxial planar PNP silicon transistor
SUR535H , Epitaxial planar PNP silicon transistor
STGD5NB120SZ
N-CHANNEL 5A
1/13January 2005
STGD5NB120SZ-1
STGD5NB120SZN-CHANNEL 5A - 1200V DPAK/IPAK
INTERNALLY CLAMPED PowerMESH™ IGBT
Rev. 2
STGD5NB120SZ-1 - STGD5NB120SZ2/13
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) VCE = 50 V , IAV = 3.3 A
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
3/13
STGD5NB120SZ-1 - STGD5NB120SZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2.
(3) Turn-off losses include also the tail of the collector current.
STGD5NB120SZ-1 - STGD5NB120SZ4/13
Table 10: Functional Test
5/13
STGD5NB120SZ-1 - STGD5NB120SZ
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
STGD5NB120SZ-1 - STGD5NB120SZ6/13
Figure 9: Gate Threshold vs Temperature
Figure 11: Switching Losses vs Gate Resis-
tance
Figure 12: Breakdown Voltage vs Temperature
Figure 13: Gate-Charge vs Gate-Emitter Volt-
age
Figure 14: Switching Losses vs Collector Cur-
rent
7/13
STGD5NB120SZ-1 - STGD5NB120SZ
Figure 15: Thermal Impedance Figure 16: Turn-Off SOA
