STGD3NB60SDT4 ,N-CHANNEL 3ASTGD3NB60SD®N-CHANNEL 3A - 600V DPAK Power MESH™ IGBTPRELIMINARY DATATYPE V V ICES CE(sat) CSTGD3 ..
STGD5NB120SZ ,N-CHANNEL 5AAbsolute Maximum ratingsSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) 1200 VCES GS ..
STGD7NB60ST4 ,N-CHANNEL 7ASTGD7NB60S®N-CHANNEL 7A - 600V DPAK Power MESH™ IGBTTYPE V V ICES CE(sat) CSTGD7NB60S 600 V < 1.6 ..
STGE50NB60HD ,N-CHANNEL 50ASTGE50NB60HD®N-CHANNEL 50A - 600V ISOTOPPowerMESH™ IGBTPRELIMINARY DATATYPE V V ICES CE(sat) CSTG ..
STGF10NB60SD ,N-CHANNEL 600V 10A TO-220FP POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) 600 VCES GSVR ..
STGF10NC60KD ,6 A, 600 V short-circuit rugged IGBTFeaturesTABTAB■ Lower on voltage drop (V )CE(sat)3■ Lower C / C ratio (no cross-conduction RES IES1 ..
SUR526H , Epitaxial planar NPN silicon transistor
SUR528H , Epitaxial planar NPN silicon transistor
SUR530H , Epitaxial planar PNP silicon transistor
SUR531H , Epitaxial planar PNP silicon transistor
SUR532H , Epitaxial planar PNP silicon transistor
SUR534H , Epitaxial planar PNP silicon transistor
STGD3NB60SDT4
N-CHANNEL 3A
STGD3NB60SDN-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS GAS DISCHARGE LAMP STATIC RELAYS MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
March 2000
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGD3NB60SD2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
COLLECTOR-EMITTER DIODE(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGD3NB60SD3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGD3NB60SD4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Off Switching Losses vs Tj
Capacitance Variations
Off Switching Losses vs Ic
Switching Off Safe Operatin Area
STGD3NB60SD5/8
Diode Forward vs Tj Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGD3NB60SD6/8
