STGF7NC60HD ,N-CHANNEL 7AAbsolute Maximum ratingsSymbol Parameter Value UnitSTGP7NC60HDSTGF7NC60HDSTGB7NC60HDV Collector-Emi ..
STGF8NC60KD ,New short circuit rugged "K" seriesElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. StaticSymbol Parameter T ..
STGP10NB60SFP ,N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBTAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK TO-220FPV Collector-Emitter Voltage ..
STGP10NC60KD ,10 A, 600 V short-circuit rugged IGBTApplicationsFigure 1. Internal schematic diagram■ High frequency motor controls■ SMPS and PFC in bo ..
STGP12NB60H ,N-CHANNEL 12AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STGP12NB60KD ,N-CHANNEL 18AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SUR543EF , Epitaxial Planar Type NPN Silicon Transistor
SUR551J , Epitaxial Planar Type PNP Silicon Transistor
SUR552J , Epitaxial planar NPN/PNP silicon transistor
SUR560J , Epitaxial planar PNP silicon transistor
SUR561J , Epitaxial planar NPN silicon transistor
SUR566EF , Epitaxial Planar Type NPN Silicon Transistor
STGB7NC60HD-STGB7NC60HDT4-STGF7NC60HD-STGP7NC60HD
N-CHANNEL 7A
1/15January 2005
STGP7NC60HD
STGF7NC60HD - STGB7NC60HDN-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK
Very Fast PowerMESH™ IGBT
Rev.8
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD2/15
Table 3: Absolute Maximum ratings ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters(#) Calculated according to the iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× --------------------------------------------------------------------------------------------------=
3/15
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current.
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD4/15
Table 10: Collector-Emitter Diode
5/15
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD6/15
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
ature
Figure 14: Total Switching Losses vs Collector
Current
7/15
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD
Figure 15: Thermal Impedance For TO-220/
D²PAK
Figure 17: Turn-Off SOA
STGP7NC60HD - STGF7NC60HD - STGB7NC60HD8/15
Figure 19: Ic vs FrequencyFor a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = ΔT / RTHJ-C
considering ΔT = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
