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STGB14NC60KDT4-STGP14NC60KD
14 A, 600 V short-circuit rugged IGBT
March 2010 Doc ID 11424 Rev 7 1/16
STGB14NC60KD
STGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBT
Features Short circuit withstand time 10µs. Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction
susceptibility) Switching losses include diode recovery
energy Very soft ultra fast recovery antiparallel diode
Applications High frequency inverters SMPS and PFC in both hard switch and
resonant topologies Motor drivers
DescriptionThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGB14NC60KD, STGF14NC60KD, STGP14NC60KD2/16 Doc ID 11424 Rev 7
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical ratings
Doc ID 11424 Rev 7 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal dataCTC() T jmax()TC–thjc– VCEsat() max()T jmax()ICTC(), ()×----------------------- ---------------------------------- ---------------------------------- ---------------=
Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
4/16 Doc ID 11424 Rev 7
2 Electrical characteristics
(Tj =25 °C unless otherwise specified)
Table 4. Static Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5. Dynamic
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical characteristics
Doc ID 11424 Rev 7 5/16
Table 6. Switching on/off (inductive load)
Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current.
Table 8. Collector-emitter diode
Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
6/16 Doc ID 11424 Rev 7
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Collector-emitter on voltage vs
collector current
Figure 7. Normalized gate threshold vs
temperature
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical characteristics
Doc ID 11424 Rev 7 7/16
Figure 8. Normalized breakdown voltage vs
temperature
Figure 9. Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
8/16 Doc ID 11424 Rev 7
Figure 14. Thermal impedance for TO-220 and 2 PAK
Figure 15. Turn-off SOA
Figure 16. Thermal impedance for TO-220FP Figure 17. Forward voltage drop versus
forward current
