STG3157CTR ,LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURESTG3157LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCHWITH BREAK BEFORE MAKE FEATURE■ HIGH SPEED:t = 0.3n ..
STG3220QTR ,Low Voltage High Bandwidth Dual SPDT Switchapplications. ■ Integrated fail safe functionThe SEL input is provided to control the switch. ■ Int ..
STG3680QTR ,LOW VOLTAGE 5OHM MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATUREAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
STG3682QTR ,Low Voltage High Bandwidth Dual SPDT Switchfeatures are fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption. Al ..
STG3682QTR ,Low Voltage High Bandwidth Dual SPDT SwitchFeatures■ Ultra low power dissipation:–I = 0.2µA (Max.) at T = 85°CCC A■ Low “ON” resistance:–R = 4 ..
STG3682QTR ,Low Voltage High Bandwidth Dual SPDT SwitchElectrical characteristics . . . . . 65 Test circuits . . . . . . 106 Package mechanica ..
SUP75P05-08 ,P-Channel 55-V (D-S) 175C MOSFET FaxBack 408-970-5600S-99404—Rev. B, 29-Nov-992-1SUP/SUB75P05-08New ProductVishay Siliconix ..
SUP85N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-20120—Rev. B, 12-Mar-022SUP/SUB85N03-04PNew ProductVishay SiliconixTYPICAL CHARACTERISTICS (25C ..
SUP85N04-03 ,N-Channel 40-V (D-S) 175C MOSFETSUP/SUB85N04-03New ProductVishay SiliconixN-Channel 40-V (D-S) 175C MOSFET
STG3157CTR
LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
1/10September 2002 HIGH SPEED:
tPD= 0.3ns (MAX.)at VCC =4.5V
tPD= 0.8ns (MAX.)at VCC =3.0VPD= 1.2ns (MAX.)atVCC =2.3V VERY LOW POWER DISSIPATION:
ICC =1μA(MAX.)at TA=85°C LOW "ON" RESISTANCEVIN =0V:ON =7Ω(MAX.TA =85°C) atVCC =4.5V
RON =9Ω (MAX. TA=85°C)at VCC =3.0V WIDE OPERATING VOLTAGE RANGE:CC (OPR)= 1.65Vto 5.5V SINGLE SUPPLY TTL THRESOLD ON CONTROL INPUTatCC= 2.7to 3.6V PIN AND FUNCTION COMPATIBLE WITH SERIES 3157 LATCH-UP PERFORMANCE EXCEEDS
300mA (JESD 17)
DESCRIPTIONThe STG3157 is an high-speed spdt CMOS
ANALOG S.P.D.T. (Single Pole Dual Throw)
SWITCH or 2:1 Multiplexer/Demultiplexer Bus
Switch fabricated in silicon gate C2 MOS
tecnology.It designedto operate from 1.65Vto
5.5V, making this device ideal for portable
applications. offers very low ON-Resistance (<9Ω)atCC =3.0V. TheIN inputis providedto control the
S.P.D.T. switch, it’s compatible with standard
CMOS output. The switch S1is ON (itis
connectedto common PortD) when theIN inputis
held high and OFF (high impedance state exists
between the two ports) whenINis held low; the
switch S2is ON(itis connectedto common Port when theIN inputis held low and OFF (high
impedance state exists between the two ports)
whenINis held high. Additional key faetures are
fast switching speed, Break Before Make Delay
Time and Very Low Power Consumption. All
inputs and output are equipped with protection
circuits against static discharge, giving them ESD
immunity and transient excess voltage.
It’s availablein the commercial temperature range smallest six lead smd packageon the market.
STG3157LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH
WITH BREAK BEFORE MAKE FEATURE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
STG31572/10
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE High Impedance
ABSOLUTE MAXIMUM RATINGSAbsoluteMaximum Ratings arethose values beyond whichdamagetothe device may occour. Functional operation under these conditionis
not implied
RECOMMENDED OPERATING CONDITIONS Truth Table guaranteed: 1.2Vto 6.0V
STG31573/10
SPECIFICATIONS
STG3157
4/10 ELECTRICAL CHARACTERISTICS (CL= 50pF, RL= 500Ω)
ANALOG SWITCH CHARACTERISTICS(CL= 5pF,RL =50Ω,TA =25°C)
STG3157
5/10 RESISTANCE LEAKAGE
OFF LEAKAGE
OFF ISOLATION
BANDWIDTH
CHANNEL TO CHANNEL CROSSTALK
STG3157
6/10
TEST CIRCUIT= 50pFor equivalent (includesjig and probe capacitance) =R1 =500Ωor equivalent =ZOUTof pulse generator (typically 50Ω)
SWITCHING TIMES WAVEFORM