STF8NK100Z ,N-CHANNEL 1000VElectrical characteristics STF8NK100Z - STP8NK100ZTable 6. Switching timesSymbol Parameter Test Con ..
STF8NK85Z ,N-CHANNEL 850V -1.1OhmAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220 TO-220FPV Drain-source Voltage (V = 0)850 ..
STF8NM60N , N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
STF9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK90Z - STF9NK90ZSTW9NK90ZN-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247Zener-Protected Supe ..
STFPC320 , Front panel controller/driver with standby power management and real-time clock
STFW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-3PF packageAbsolute maximum ratingsValue2Symbol Parameter H PAK-2, UnitTO-3PF TO-220, TO-247V Drain-source ..
SUP57N20-33 ,N-Channel 200-V (D-S) 175C MOSFETS-22449—Rev. A, 20-Jan-03 1SUP57N20-33New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTH ..
SUP60N06-18 ,N-Channel Enhancement-Mode TransSUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175C MOSFET
STF8NK100Z-STP8NK100Z
N-CHANNEL 1000V
Rev 1
November 2005 1/13
STF8NK100Z
STP8NK100ZN-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP
Zener-Protected SuperMESH™ MOSFET
General features EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE RATED IMPROVED ESD CAPABILITY VERY LOW INTRINSIC CAPACITANCE
DescriptionThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications HIGH CURRENT,SWITCHING APPLICATION IDEAL FOR OFF-LINE POWER SUPPLIES
Order codes
Internal schematic diagram
1 Electrical ratings
STF8NK100Z - STP8NK100Z2/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Table 2. Thermal data
Table 3. Avalanche Characteristics
STF8NK100Z - STP8NK100Z 2 Electrical characteristics
3/13
2 Electrical characteristics(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
2 Electrical characteristics
STF8NK100Z - STP8NK100Z4/13
Table 6. Switching times
Table 7. Source drain diode
Table 8. Gate-source zener diode(1) Limited only by maximum temperature allowed
(2)ISD ≤ 6.5 A, di/dt ≤ 200A/µs, V DS ≤ V(BR)DSS, Tj≤ Tjmax
(3) Pulse width limited by safe operating area
(4) The built-in-back-to-back Zener diodes have specifically been designed to enanche not only the device’s ESD capability, but
also to make them safely absorb possible voltage is appropriate to archieve an efficient and cost-effective intervention to
protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS
(6) Pulsed: pulse duartion = 300µs, duty cycle 1.5%
STF8NK100Z - STP8NK100Z 2 Electrical characteristics
5/13
2.1 Electrical characteristics (curves)
Figure 1. Safe Operating Area for TO-220 Figure 2. Thermal Impedance for TO-220
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
Figure 5. Output Characteristics Figure 6. Transfer Characteristics
2 Electrical characteristics
STF8NK100Z - STP8NK100Z6/13
Figure 7. Transconductance Figure 8. Static Drain-source on Resistance
Figure 9. Gate Charge vs Gate-source Volatge Figure 10. Capacitance Variations
Figure 11. Normalized Gate Threshold Voltage
vs. Temperature
Figure 12. Normalized On Resistance vs.
Temperature
STF8NK100Z - STP8NK100Z 2 Electrical characteristics
7/13
Figure 13. Source-drain Diode Forward
Characteristics
Figure 14. Normalized BVDSS vs Temperature
Figure 15. Maximum Avalanche Energy vs
Temperature
