STP40NF20 ,N-channel 200VFeatures Type V R I PDSS DS(on) D W3STB40NF20 200V <0.045Ω 40A 160W1321STP40NF20 200V <0.04 ..
STP40NS15 ,N-CHANNEL 150V 0.042 OHM 40A TO-220 MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STP42N65M5 ,N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STP45N10 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP45N10STP45N10FI®N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FIPOWER MOS TRANSISTORTYPE V R ID ..
STP45N65M5 ,N-channel 650 V, 0.067 Ohm, 35 A, MDmesh(TM) V Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STP45NE06L ,N-CHANNEL 60VSTP45NE06LSTP45NE06LFP®N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FPSTripFET™ POWER MOSFETPRELI ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STF40NF20-STP40NF20-STW40NF20
N-channel 200V
July 2007 Rev 2 1/17
STP40NF20 - STF40NF20
STB40NF20 - STW40NF20N-channel 200V - 0.038Ω -40A- D2P AK/TO-220/TO-220FP/TO-247
Low gate charge ST ripFET™ Power MOSFET
Features Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Excellent figure of merit (RDS*Qg) 100% avalanche tested
DescriptionThis Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Applications Switching application
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STB40NF20 - STF40NF20 - STP40NF20 - STW40NF202/17
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings Value limited by wire bonding Pulse width limited by safe operating area. ISD ≤ 40A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Table 2. Thermal data for 10 sec. 1.6mm from case
Table 3. Avalanche characteristics
Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical characteristics
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Table 6. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220/ 2 PAK
Figure 3. Thermal impedance area for TO-220/ 2 PAK
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical characteristics
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Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Electrical characteristics STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
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Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Test circuit
9/17 Test circuit
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped Inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform