STP26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
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STF26NM60N -STP26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
September 2013 DocID15642 Rev 6 1/20
STB26NM60N, STF26NM60N,
STP26NM60NN-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs
in D2 PAK, TO-220FP and TO-220 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STB26NM60N, STF26NM60N, STP26NM60N2/20 DocID15642 Rev 6
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID15642 Rev 6 3/20
STB26NM60N, STF26NM60N, STP26NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Table 4. Avalanche characteristics
Electrical characteristics STB26NM60N, STF26NM60N, STP26NM60N
4/20 DocID15642 Rev 6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
DocID15642 Rev 6 5/20
STB26NM60N, STF26NM60N, STP26NM60N Electrical characteristics
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
