STF22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FPElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STF23NM50N ,N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAK TO-247 TO-220FPV Drain-source volta ..
STF24NF12 , N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET™ II MOSFET
STF24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FPAbsolute maximum ratingsValue2Symbol Parameter I PAK UnitTO-220 TO-220FPTO-247V Gate- source voltag ..
STF24NM65N ,N-channel 650 VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/I²PAKTO-220FPTO-247/D²PAKV Drain-source vo ..
STF25A60 , Bi-Directional Triode Thyristor
SUM85N03-06P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N15-19 ,N-Channel 150-V (D-S) 175C MOSFETS-04889—Rev. A, 15-Oct-01 1SUM85N15-19New ProductVishay Siliconix ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
STF22NM60N -STP22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in D2PAK
January 2011 Doc ID 15853 Rev 4 1/23
STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60NN-channel 600 V , 0.2 Ω , 16 A MDmesh™ II Power MOSFET
in D2P AK, TO-220FP, I2P AK, TO-220 and TO-247
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
ApplicationSwitching applications
DescriptionThese devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STB/F/I/P/W22NM60N2/23 Doc ID 15853 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
STB/F/I/P/W22NM60N Electrical ratings
Doc ID 15853 Rev 4 3/23
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Thermal data
Electrical characteristics STB/F/I/P/W22NM60N
4/23 Doc ID 15853 Rev 4
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STB/F/I/P/W22NM60N Electrical characteristics
Doc ID 15853 Rev 4 5/23
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
