STF20NM65N ,N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified).C Table 5. On/off statesSymbol Par ..
STF21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FPElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STF21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesValueSymbol ..
STF22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FPElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STF23NM50N ,N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAK TO-247 TO-220FPV Drain-source volta ..
STF24NF12 , N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET™ II MOSFET
SUM70N03-09CP ,N-Channel 30-V (D-S), 175C MOSFET
SUM85N03-06P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N15-19 ,N-Channel 150-V (D-S) 175C MOSFETS-04889—Rev. A, 15-Oct-01 1SUM85N15-19New ProductVishay Siliconix ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
STF20NM65N
N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP package
May 2011 Doc ID 13845 Rev 2 1/16
STP20NM65N
STF20NM65NN-channel 650 V , 0.250 Ω , 15 A TO-220, TO-220FP
second generation MDmesh™ Power MOSFET
Features 100 % avalanche tested Low input capacitance and gate charge Low gate input resistance
Application Switching applications
DescriptionThese devices are N-channel Power MOSFETs
realized using the second generation MDmesh™
technology. This revolutionary Power MOSFET
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STP20NM65N, STF20NM65N2/16 Doc ID 13845 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristecs (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP20NM65N, STF20NM65N Electrical ratings
Doc ID 13845 Rev 2 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STP20NM65N, STF20NM65N
4/16 Doc ID 13845 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5. On/off states
Table 6. Dynamic Coss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDSS.
Table 7. Switching times
STP20NM65N, STF20NM65N Electrical characteristics
Doc ID 13845 Rev 2 5/16
Table 8. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
